Thermal Grade

Thermal Super-material Diamond: Engineered for Extreme Heat Flux Management

Single Crystals & Polycrystalline Wafers Redefining Thermal Limits

Core Value Proposition

Deploy the world’s highest thermal conductivity material (2000+ W/mK) in scalable formats – from precision single-crystal heat spreaders to 4-inch polycrystalline wafers – solving thermal bottlenecks in power electronics, RF systems, and laser technologies.

Technology Comparison Table

Property	Our Polycrystalline Wafer	Our Single Crystal Substrtes	Competitors (Cu/AlN)
Thermal Conductivity	1000–1400 W/mK	>2000 W/mK	Cu: 400 W/mK · AlN: 180 W/mK
Max. Size	4-inch (100 mm) dia.	30×30 mm	Cu: 300 mm · AlN: 150 mm
CTE Match	0.8–1.2 ppm/K (Si/GaN close)	0.9 ppm/K	Cu: 17 ppm/K · AlN: 4.5 ppm/K
Dielectric Strength	>10 MV/cm	>10 MV/cm	Cu: Conductive · AlN: 1.7 MV/cm
Weight Savings	65% lighter than copper	70% lighter than copper	N/A

Product Line Specifications

Polycrystalline Diamond Wafers

Sizes: 25 mm → 100 mm (4″) diameter
Thickness: 300 μm → 2 mm (±10 μm)
Thermal Performance: 1000–1400 W/mK (verified laser flash analysis)
Form : Self-Standing or Epitaxial on Si

Single Crystal Heat Spreaders

Dimensions: Up to 30×30 mm(custom sizes available)
Thickness: 200 μm → 12 mm
Thermal Performance: >2000 W/mK
Orientation: (100), (110) or any Intermediate orientation

Are you interested in Thermal Grade Management?

Solve Critical Thermal Challenges

GaN/SiC Power Electronics

Prevent GaN HEMT degradation at 1+ kW/cm²:

Diamond submounts reduce ΔT by 60% vs. copper
CTE match eliminates solder fatigue failures

5G/6G RF Amplifiers

Enable mmWave operation with diamond:

4-inch wafers integrate directly with GaN-on-SiC fabs
22× lower RF loss than Cu-Mo composites

High-Power Laser Diodes

Double output power with diamond heatsinks:

2000 W/mK single crystals for 500 W+ laser bars
Transparency at pump wavelengths (808 nm) for edge-cooling

Why Diamond Outperforms

At >2000 W/mK, diamond conducts heat 5× faster than copper while being electrically insulating. Our materials deliver:

Zero thermal runaway at 1000+ W/cm² flux
10× longer lifetime vs. AlN in power cycling tests
Direct bonding to Si, GaAs, GaN without stress cracking

Manufacturing Advantages

Scalability

4-inch polycrystalline wafers enable:

Standard semiconductor tooling compatibility
Batch processing for volume production (Qty 1000+/month)

Reliability by Design

Grain boundary engineering for isotropic thermal flow

XRD-verified crystal orientation in single crystals
Laser-cut edges for crack prevention

Frequently Asked Questions (FAQs)

How much better is diamond at cooling than copper?

Diamond conducts heat 5× faster than copper (2000+ W/mK vs. 400 W/mK). It stays cooler under extreme heat, making it perfect for high-power electronics and lasers.

Can diamond replace copper in electronics?

Yes! Diamond cools better, weighs 70% less, and won’t expand/break like copper. It’s also electrically insulating, so it won’t short-circuit your devices.

What sizes do your diamond wafers come in?

We offer:

Polycrystalline wafers (4-inch/100 mm diameter) for large-scale cooling.
Single-crystal diamond (up to 30×30 mm) for precision heat spreading.

Why is diamond good for 5G and power electronics?

Diamond handles 1000+ W/cm² heat without failing, keeps GaN/SiC chips cool, and reduces RF signal loss 22× better than copper-molybdenum.

How do I test diamond for my application?

We provide thermal test reports (ASTM certified) and can help simulate how diamond improves your design. Ask for samples or our ROI whitepaper.

Transform Thermal Management

Request thermal simulation support for your module or download our whitepaper: ‘Diamond vs. Cu: ROI Calculation for Power Electronics’