What Are Electronic Grade Diamonds?
When researchers ask “what is electronic grade diamond?” the answer lies in a unique class of diamond substrates engineered for electronics, semiconductors, and quantum technologies. Unlike natural or jewellery-grade diamonds, electronic grade diamond is manufactured with ultra-low defects, atomically precise doping, and extreme material homogeneity.
With exceptional breakdown field, thermal conductivity, and carrier mobility, electronic grade diamonds outperform conventional materials like silicon, SiC, and GaN, making them a revolutionary platform for next-generation power electronics, quantum devices, and extreme environment sensors.
Diamond Semiconductors Reborn: Precision-Doped for Extreme Electronics
At Supreme Green, we deliver electronic grade diamond specifications that redefine what’s possible:
- Ultra-Wide Bandgap FETs
- Quantum Electrodes
- Buried Heterostructures
- Epitaxial Integration
Engineered atom-by-atom, these materials unlock order of magnitude higher electron mobility than SiC, enabling devices once thought impossible.
Core Value Proposition
Our Ultra-Pure Electronic Grade Substrates contain Nitrogen that is below the detection limit of ToF SIMS. These are essential starting materials for a number of Quantum and Electronic applications.
We also pioneer atomically controlled doping (Boron/Phosphorus), buried heterostructures, and epitaxial integration – unlocking diamond’s extreme performance for:
- Revolutionary power devices
- Quantum sensors
- Neural and electrochemical interfaces
- Harsh environment electronics
Why Diamond Electronics?
| Property | Diamond vs. SiC/GaN | Our Advantage |
| Breakdown Field | 10 MV/cm (3× GaN) | Enables 30kV+ devices |
| Thermal Conduct. | 2200 W/mK (5× SiC) | No derating at 500°C |
| Carrier Mobility | 4500 cm²/V·s (10× Si) | GHz switching in mm² chips |
| Johnson’s Figure | Highest of any material | 100× power handling vs. Si |
Targeted Applications
Next-Gen Power Electronics
- 10 kV+ diamond Schottky diodes (10¹⁷/cm³ drift layers)
- 50 kW RF amplifiers with boron-doped heat spreaders
- Fusion reactor diagnostics (radiation-hard sensors)
Quantum Electrode Systems
- Boron-doped nanowire electrodes for neural interfaces
- NV⁻-to-dopant coupled qubits (10¹⁹/cm³ interlayers)
- Electrochemical NMR diamonds with P-doped contacts
Extreme Environment Sensors
- Jet engine T-sensors (600°C operation)
- Deep-earth geophysical probes
- Venus lander electronics (500°C, 90 atm)
| Feature | Specification | Certification Method |
| Doping Accuracy | ±5% across 20 mm wafer | SIMS depth profiling |
| Layer Thickness | ±10 nm (buried interlayers) | TEM cross-section |
| Mobility @ 300K | Holes: 2000 cm²/V·s, Electrons: 600 cm²/V·s | Hall measurement |
| Surface Roughness | <1 nm Ra (epitaxy-ready) | AFM 50×50 μm scan |
| Substrate Size | 2×2 mm → 30×30 mm | Laser interferometry |
Manufacturing Excellence
- MPCVD Process: Gas-phase doping with real-time optical monitoring
- Buried Layer Tech: Stoichiometric interfaces with <0.1% cross-contamination
- Industrial Scale: Batch production of 1000+ Substrates/month (20×20 mm)
Why Competitors Can’t Match This
- 1021/cm³ Boron: Highest p-type conductivity commercially available
- Stable n-type: Phosphorus doping without compensatory nitrogen
- True 3D Integration: Pure/doped layer stacks – not just surface doping
Conclusion: The Future of Electronics with Diamond
From quantum sensors to extreme power devices, electronic grade diamonds represent a turning point in global semiconductor technology. By combining specifications with scalable manufacturing, Supreme Green positions itself as a global leader in diamond semiconductors.
If you’re searching for electronic grade diamond solutions designed for the toughest challenges, our expertise ensures unmatched performance.
FAQs
Q1. What is electronic grade diamond?
Electronic grade diamond is an ultra-pure, precision-doped diamond substrate engineered for use in semiconductors, quantum devices, and power electronics.
Q2. What are the key specifications of electronic grade diamond?
Specifications include doping accuracy ±5%, layer thickness control ±10 nm, mobility up to 4500 cm²/V·s, surface roughness <1 nm Ra, and wafer sizes up to 30×30 mm.
Q3. Why is diamond better than SiC or GaN for electronics?
Diamond offers 3× higher breakdown field, 5× greater thermal conductivity, and 10× carrier mobility, enabling devices that operate at higher power, frequency, and temperature.
Q4. What applications use electronic grade diamond?
Applications include power electronics, quantum sensors, neural interfaces, electrochemical devices, radiation detectors, and extreme environment probes.
Q5. How are electronic grade diamonds manufactured?
They are grown using MPCVD (Microwave Plasma Chemical Vapor Deposition) with atomically controlled doping and buried heterostructure technology.
